1НТ251
TS number
И93.456.000ТУ/АЕНВ.432140.716ТУ
Coating
gold, nickel
Case type
401.14-5М, 401.14-5НБ
Price on demand
- Technical characteristics
Transistor packs type 1НТ251(A)/1НТ251(A)/KM consisting of four n-p-n silicon epitaxial transistors are designed to operate in electronic equipment.
Main electrical parameters
| Parameter name, unit of measurement | Parameter symbol | Standard | |
| at least | at most | ||
| Ambient temperature, °С | Т | -60 | 125 |
| Maximum permissible collector-base DC voltage, V, | UCB MAX | – | 45 |
| Maximum collector-emitter DC voltage, V, Reb ≤ 1 kOhm | UCEMAX | – | 45 |
| Maximum emitter-base voltage, V | UEBMAX | – | 4 |
| Maximum direct current of collector, mA | ICMAX | – | 400 |
| Maximum pulse current of collector, mA | ICP MAX | – | 800 |
| Maximum total constant dissipation power of collectors, W | РCMAX | – | 0,4 |
| Maximum pulse dissipation power of collectors, W | РCPMAX | – | 10,0 |